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CORC

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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：113/3  |  提交时间：2010/04/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
Applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: 3
作者:  Xu, Xiaoqing;  Liu, Xianglin;  Yang, Shaoyan;  Liu, Jianming;  Wei, Hongyuan
收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:  Zhang XW;  You JB;  Yin ZG
收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
Investigation on the structural origin of n-type conductivity in inn films 期刊论文
Journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: 5
作者:  Wang, H.;  Jiang, D. S.;  Wang, L. L.;  Sun, X.;  Liu, W. B.
收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载：53/1  |  提交时间：2010/03/08
Optical analysis of dislocation-related physical processes in gan-based epilayers 期刊论文
Physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
作者:  Jiang, De-Sheng;  Zhao, De-Gang;  Yang, Hui
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
Reduction of dislocations in gan epilayer grown on si (111) substrates using a gan intermedial layer 期刊论文
Chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
作者:  Wang Jian-Feng;  Zhang Bao-Shun;  Zhang Ji-Cai;  Zhu Jian-Jun;  Wang Yu-Tian
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering 期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.094302
作者:  Jiang DS
收藏  |  浏览/下载：36/0  |  提交时间：2010/04/11

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