Optical analysis of dislocation-related physical processes in GaN-based epilayers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Optical analysis of dislocation-related physical processes in GaN-based epilayers
	Jiang, DS (Jiang, De-Sheng) ; Zhao, DG (Zhao, De-Gang) ; Yang, H (Yang, Hui)
刊名	physica status solidi b-basic solid state physics
	2007
卷号	244 期号:8 页码:2878-2891
关键词	CHEMICAL-VAPOR-DEPOSITION
ISSN号	issn: 0370-1972
通讯作者	jiang, ds, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: dsjiang@red.semi.ac.cn
中文摘要	in this paper, recent progresses in optical analysis of dislocation-related physical properties in gan-based epilayers are surveyed with a brief review. the influence of dislocations on both near-band edge emission and yellow luminescence (yl) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. threading dislocations may introduce non-radiative recombination centers and enhance yl, but their effects are affected by the structural and chemical environment. the minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. the in situ optical monitoring of the strain evolution process is employed during gan heteroepitaxy using an ain interlayer. a typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed. (c) 2007 wiley-vch verlag gmbh & co. kgaa, weinheim.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9354]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang, DS ,Zhao, DG ,Yang, H . Optical analysis of dislocation-related physical processes in GaN-based epilayers[J]. physica status solidi b-basic solid state physics,2007,244(8):2878-2891.
APA	Jiang, DS ,Zhao, DG ,&Yang, H .(2007).Optical analysis of dislocation-related physical processes in GaN-based epilayers.physica status solidi b-basic solid state physics,244(8),2878-2891.
MLA	Jiang, DS ,et al."Optical analysis of dislocation-related physical processes in GaN-based epilayers".physica status solidi b-basic solid state physics 244.8(2007):2878-2891.