Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices | |
Zhang SM; Wang LJ; Wang YT; Yang H; Wang LJ; Zhu JH; Jiang DS; Zhu JJ; Yang H; Zhao DG | |
刊名 | chinese physics b |
2010 | |
卷号 | 19期号:1页码:art. no. 017307 |
关键词 | GaN light emitting diode surface treatment leakage current THREADING DISLOCATION DENSITIES LAYERS NI/AU LEDS |
通讯作者 | zhang, sm, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail address: smzhang@red.semi.ac.cn |
合作状况 | 其它 |
英文摘要 | to form low-resistance ohmic contact to p-type gan, ingan/gan multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to ni/au (5 nm/5 nm) film deposition. the surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. it is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-gan layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. it suggests that the metal atoms of the ni/au transparent electrode of light emitting diode devices may diffuse into the p-gan layer along threading dislocation lines and form additional leakage current channels. therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05t06:09:58z no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-05t06:48:43z (gmt) no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5); made available in dspace on 2010-04-05t06:48:43z (gmt). no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5) previous issue date: 2010; national natural science foundation of china 60776047 60836003 60476021 60576003; 其它 |
学科主题 | 光电子学 |
收录类别 | SCI |
资助信息 | national natural science foundation of china 60776047 60836003 60476021 60576003 |
语种 | 英语 |
公开日期 | 2010-04-05 ; 2010-10-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/10208] |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Zhang SM,Wang LJ,Wang YT,et al. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices[J]. chinese physics b,2010,19(1):art. no. 017307. |
APA | Zhang SM.,Wang LJ.,Wang YT.,Yang H.,Wang LJ.,...&Zhao DG.(2010).Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices.chinese physics b,19(1),art. no. 017307. |
MLA | Zhang SM,et al."Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices".chinese physics b 19.1(2010):art. no. 017307. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论