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科研机构
半导体研究所 [139]
内容类型
期刊论文 [110]
会议论文 [29]
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2011 [9]
2010 [10]
2009 [12]
2008 [11]
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2006 [17]
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浏览/检索结果:
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A theoretical calculation of the impact of gan cap and alxga1-xn barrier thickness fluctuations on two-dimensional electron gas in a gan/alxga1-xn/gan heterostructure
期刊论文
Ieee transactions on electron devices, 2011, 卷号: 58, 期号: 12, 页码: 4272-4275
作者:
Liu, Guipeng
;
Wu, Ju
;
Lu, Yanwu
;
Zhang, Biao
;
Li, Chengming
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/05/12
Cap-thickness-fluctuation (ctf) and barrierthickness fluctuation (btf) scattering
Interface roughness scattering
Two dimensional electron gas (2deg)
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with inas quantum dots
期刊论文
Physica e-low-dimensional systems & nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
作者:
Li, Y. Q.
;
Wang, X. D.
;
Xu, X. N.
;
Liu, W.
;
Yang, F. H.
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/05/12
Quantum dots
Modulation-doped
Field-effect transistors
Output characteristics
Highly reproducible nanolithography by dynamic plough of an atomic-force microscope tip and thermal-annealing treatment
期刊论文
Ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
作者:
Lu, Xiaofeng
;
Balocco, Claudio
;
Yang, Fuhua
;
Song, Aimin M.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/12
Atomic-force microscope (afm)
Nanolithography
Self-switching diodes (ssds)
2-d electron gas
Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment
期刊论文
ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58
Lu XF
;
Balocco C
;
Yang FH
;
Song AM
收藏
  |  
浏览/下载:71/7
  |  
提交时间:2011/07/05
Atomic-force microscope (AFM)
nanolithography
self-switching diodes (SSDs)
2-D electron gas
CONDUCTING POLYMER-FILMS
NANOMETER-SCALE
LITHOGRAPHY
FABRICATION
SURFACES
DEVICES
NANOSTRUCTURES
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 5, 页码: article no.55013
Wu CM
;
Zhang BP
;
Shang JZ
;
Cai LE
;
Zhang JY
;
Yu JZ
;
Wang QM
收藏
  |  
浏览/下载:66/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
MIRRORS
GAN
WAVELENGTHS
Optically induced current oscillation in a modulation-doped field-effect transistor embedded with InAs quantum dots
期刊论文
physica e: low-dimensional systems and nanostructures, 2011, 卷号: 44, 期号: 3, 页码: 686-689
Li, Y.Q.
;
Wang, X.D.
;
Xu, X.N.
;
Liu, W.
;
Yang, F.H.
;
Zeng, Y.P.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2012/06/14
Electron absorption
Indium arsenide
Logic circuits
MODFETS
Modulation
Two dimensional electron gas
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:
Shi K
;
Jiao CM
;
Song HP
收藏
  |  
浏览/下载:94/7
  |  
提交时间:2011/07/05
Valence band offset
GaN/diamond heterojunction
XPS
Conduction band offset
CHEMICAL-VAPOR-DEPOSITION
ALGAN/GAN HEMTS
DIAMOND
GAN
FILMS
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:
Song HP
收藏
  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SEMICONDUCTOR NANOWIRES
NITRIDE NANOTUBES
GAN
EMISSION
MECHANISM
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:35/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Cluster scattering in two-dimensional electron gas investigated by born approximation and partial-wave methods
期刊论文
Physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
作者:
Li, Zhiwei
;
Xu, Xiaoqing
;
Wang, Jun
;
Liu, Jianming
;
Liu, Xianglin
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/05/12
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