Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD

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	Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
	Song HP
刊名	nanotechnology
	2011
卷号	22 期号:23 页码:article no.235603
关键词	CHEMICAL-VAPOR-DEPOSITION SEMICONDUCTOR NANOWIRES NITRIDE NANOTUBES GAN EMISSION MECHANISM
ISSN号	0957-4484
通讯作者	zhang, ba, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. zhangbiao@semi.ac.cn ; xlliu@semi.ac.cn ; qszhu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	national science foundation of china [60776015, 10979507]; special funds for major state basic research project (973 program) of china [2006cb604907]; 863 high technology r&d program of china [2007aa03z402, 2007aa03z451]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	well-aligned tilted zn-doped inn nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. all of the nanorods are symmetrically tilted in two opposite directions. x-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane inn film. the nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the inn nanomaterials and their properties.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21259]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Song HP. Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD[J]. nanotechnology,2011,22(23):article no.235603.
APA	Song HP.(2011).Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD.nanotechnology,22(23),article no.235603.
MLA	Song HP."Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD".nanotechnology 22.23(2011):article no.235603.