Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition | |
Fu D ; Zhang R ; Liu B ; Xie ZL ; Xiu XQ ; Gu SL ; Lu H ; Zheng YD ; Chen YH ; Wang ZG | |
刊名 | journal of physics d-applied physics |
2011 | |
卷号 | 44期号:24页码:article no.245402 |
关键词 | FUNDAMENTAL-BAND GAP INDIUM NITRIDE BUFFER LAYER DEPENDENCE SAPPHIRE MOCVD |
ISSN号 | 0022-3727 |
通讯作者 | fu, d, nanjing univ, sch elect sci & engn, jiangsu prov key lab adv photon & elect mat, nanjing 210093, jiangsu, peoples r china. rzhang@nju.edu.cn |
学科主题 | 半导体物理 |
收录类别 | SCI |
资助信息 | special funds for major state basic research project [2011cb301900]; hi-tech research project [2009aa03a198]; national nature science foundation of china [60990311, 60721063, 60906025, 60936004]; nature science foundation of jiangsu province [bk2008019, bk2010385, bk2009255, bk2010178]; nju-yangzhou institute of opto-electronics ; graduate student research innovation project of jiangsu province [cx09b 009z] |
语种 | 英语 |
公开日期 | 2011-07-05 ; 2011-07-15 |
附注 | in this paper a systematic investigation of structural and optical anisotropy of m-plane inn film grown on gamma-lialo2(1 0 0) substrate by metal organic chemical vapour deposition, which is believed to be much more difficult than molecular beam epitaxy, is presented. the inn film showed pure m-plane phase as confirmed by x-ray diffraction omega/2 theta scan together with polarized raman spectroscopy. the epitaxial relationship between the m-plane inn and the substrate was found to be [0 0 0 1](inn) parallel to [0 1 0](lao) and [1 1 - 2 0](inn) parallel to [0 0 1](lao). the inherent film mosaic anisotropy was studied by x-ray rocking curve analysis. atomic force microscopy revealed that stripe-like features appear on the surface of the m-plane inn film, which originated from the replication of the surface morphological anisotropy of the substrate. scanning electron microscopy showed blocky surface structures that were indicative of three-dimensional growth mode, which was related to the anisotropic structural mismatch of the film and the foreign substrate. a small direct band gap of similar to 0.7ev of the m-plane inn film was confirmed by low-temperature photoluminescence spectra, which showed evident polarization anisotropy in terms of both intensity and peak energy. finally, a blue-shift of absorption edge as compared with the photoluminescence peak energy was observed and fully accounted for by the burstein-moss effect. |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/21221] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Fu D,Zhang R,Liu B,et al. Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition[J]. journal of physics d-applied physics,2011,44(24):article no.245402. |
APA | Fu D.,Zhang R.,Liu B.,Xie ZL.,Xiu XQ.,...&Wang ZG.(2011).Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition.journal of physics d-applied physics,44(24),article no.245402. |
MLA | Fu D,et al."Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition".journal of physics d-applied physics 44.24(2011):article no.245402. |
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