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CORC

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Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60
作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/11
Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文
Journal of Physics and Chemistry of Solids, 2019, 卷号: 129, 页码: 54-60
作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang
收藏  |  浏览/下载：19/0  |  提交时间：2019/12/11
GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 9
作者:  Zhu, Gengchang;  Wang, Yiming;  Xin, Qian;  Xu, Mingsheng;  Chen, Xiufang
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文
NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189
作者:  Hao, Meilan;  Wang, Quan;  Jiang, Lijuan;  Feng, Chun;  Chen, Changxi
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11
Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer 期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7479-7483
作者:  Hao, Meilan;  Wang, Quan;  Jiang, Lijuan;  Feng, Chun;  Chen, Changxi
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11
Influence of polarization Coulomb field scattering on high-temperature electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 120, 页码: 389-394
作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Fu, Chen;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
Effects of Floating Gate Structures on the Two-Dimensional Electron Gas Density and Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2017, 卷号: 71, 期号: 12, 页码: 963-967
作者:  Zhao, Jingtao;  Zhao, Zhenguo;  Chen, Zidong;  Lin, Zhaojun;  Xu, Fukai
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/12
The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 卷号: 68, 期号: 7, 页码: 883-888
作者:  Liu, Yan;  Lin, Zhaojun;  Zhao, Jingtao;  Yang, Ming;  Shi, Wenjing
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16
Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 11
作者:  Zhu, Gengchang;  Wang, Hanbin;  Wang, Yiming;  Feng, Xianjin;  Song, Aimin
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/16

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