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	Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer
	Hao, Meilan; Wang, Quan; Jiang, Lijuan; Feng, Chun; Chen, Changxi; Wang, Cuimei; Xiao, Hongling; Liu, Fengqi; Xu, Xiangang; Wang, Xi 更多
刊名	NANOSCIENCE AND NANOTECHNOLOGY LETTERS
	2018
卷号	10期号:2页码:185-189
关键词	HEMT Fe Doping Gate Leakage Breakdown PF Emission FN Tunneling
DOI	10.1166/nnl.2018.2601
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4573947
专题	山东大学
作者单位	Chinese
推荐引用方式 GB/T 7714	Hao, Meilan,Wang, Quan,Jiang, Lijuan,et al. Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer[J]. NANOSCIENCE AND NANOTECHNOLOGY LETTERS,2018,10(2):185-189.
APA	Hao, Meilan.,Wang, Quan.,Jiang, Lijuan.,Feng, Chun.,Chen, Changxi.,...&Wang, Xi 更多.(2018).Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer.NANOSCIENCE AND NANOTECHNOLOGY LETTERS,10(2),185-189.
MLA	Hao, Meilan,et al."Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer".NANOSCIENCE AND NANOTECHNOLOGY LETTERS 10.2(2018):185-189.

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