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浏览/检索结果: 共10条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文 JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2019, 卷号: 129, 页码: 54-60 作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang 收藏  |  浏览/下载：23/0  |  提交时间：2019/12/11 Reactive evaporation  SiOx  Passivation  GaN  HEMTs   Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors 期刊论文 Journal of Physics and Chemistry of Solids, 2019, 卷号: 129, 页码: 54-60 作者:  Zhu, Gengchang;  Liang, Guangda;  Zhou, Yang;  Chen, Xiufang;  Xu, Xiangang 收藏  |  浏览/下载：19/0  |  提交时间：2019/12/11 Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 4, 页码: 1377-1382 作者:  Wang, Yiming;  Yang, Jin;  Wang, Hanbin;  Zhang, Jiawei;  Li, He 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 Amorphous indium-gallium-zinc oxide ( a-InGaZnO)  current gain  high  frequency  thin-film transistor (TFT)   GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 卷号: 33, 期号: 9 作者:  Zhu, Gengchang;  Wang, Yiming;  Xin, Qian;  Xu, Mingsheng;  Chen, Xiufang 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11 GaN  MOS-HEMTs  thermal evaporation  SiO   Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature 期刊论文 Journal of Physics Condensed Matter, 2016, 卷号: 28, 期号: 5 作者:  Ren, Shaoqing;  Zhu, Gengchang;  Xie, Jihao;  Bu, Jianpei;  Qin, Hongwei 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/16 Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation 期刊论文 APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 11 作者:  Zhu, Gengchang;  Wang, Hanbin;  Wang, Yiming;  Feng, Xianjin;  Song, Aimin 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/16 Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 卷号: 28, 期号: 5 作者:  Ren, Shaoqing;  Zhu, Gengchang;  Xie, Jihao;  Bu, Jianpei;  Qin, Hongwei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 d0 magnetism  resistive switching  electrical control of ferromagnetism   Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature 期刊论文 Applied Physics Letters, 2015, 卷号: 107, 期号: 6 作者:  Ren, Shaoqing;  Qin, Hongwei;  Bu, Jianpei;  Zhu, Gengchang;  Xie, Jihao 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature 期刊论文 APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 6 作者:  Ren, Shaoqing;  Qin, Hongwei;  Bu, Jianpei;  Zhu, Gengchang;  Xie, Jihao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Coexistence of electric field controlled ferromagnetism and resistive switching for TiO2 film at room temperature 期刊论文 Applied physics letters, 2015, 期号: 6, 页码: 062404-1-062404-5 作者:  Ren, Shaoqing;  Qin, Hongwei;  Bu, Jianpei;  Zhu, Gengchang;  Xie, Jihao 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17