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CORC

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The effect of cavities on recrystallization growth of high-fluence He implanted-SiC 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2021, 卷号: 509, 页码: 68-72
作者:  Zhang, Tongmin;  He, Xiaoxun;  Chen, Limin;  Li, Jun;  Liao, Qing
收藏  |  浏览/下载：37/0  |  提交时间：2022/01/07
Quantitative analysis of rhenium in irradiated tungsten 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2021, 卷号: 554, 页码: 9
作者:  Warnicke, P.;  Ramanantoanina, H.;  Li, J.;  Dai, Y.;  Pouchon, M. A.
收藏  |  浏览/下载：16/0  |  提交时间：2021/12/09
Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 degrees C* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 7, 页码: 7
作者:  Liao, Qing;  Li, Bingsheng;  Kang, Long;  Li, Xiaogang
收藏  |  浏览/下载：11/0  |  提交时间：2021/12/15
Comparison of Cavities Formed in Single Crystalline and Polycrystalline alpha-SiC after H Implantation 期刊论文
CHINESE PHYSICS LETTERS, 2020, 卷号: 37, 期号: 7, 页码: 5
作者:  Liao, Qing;  Kang, Long;  Zhang, Tong-Min;  Liu, Hui-Ping;  Wang, Tao
收藏  |  浏览/下载：17/0  |  提交时间：2022/01/12
61  80  Jh  61  82  Fk  68  37  Lp  81  40  Wx  
Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 454, 页码: 45-49
作者:  Li, Bingsheng;  Liu, Yuzhu;  Liu, Huiping;  Kang, Long;  Xiong, Anli
收藏  |  浏览/下载：52/0  |  提交时间：2019/11/10
New interatomic potentials of W, Re and W-Re alloy for radiation defects 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2018, 卷号: 502, 页码: 141-153
作者:  Chen, Yangchun;  Li, Yu-Hao;  Gao, Ning;  Zhou, Hong-Bo;  Hu, Wangyu
收藏  |  浏览/下载：31/0  |  提交时间：2018/05/31
The effects of swift heavy-ion irradiation on helium-ion-implanted silicon 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2014, 卷号: 337, 页码: 21-26
作者:  Li, B. S.;  Du, Y. Y.;  Wang, Z. G.;  Shen, T. L.;  Li, Y. F.
收藏  |  浏览/下载：40/0  |  提交时间：2018/07/05
Microstructural evolution upon annealing in Ar-implanted Si 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9183-9187
作者:  Yang, Y. T.;  Zhang, L. Q.;  Xu, C. L.;  Li, B. S.;  Zhang, C. H.
收藏  |  浏览/下载：20/0  |  提交时间：2015/10/15

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