Microstructural evolution upon annealing in Ar-implanted Si

doi:10.1016/j.apsusc.2011.05.129

	Microstructural evolution upon annealing in Ar-implanted Si
	Yang, Y. T.; Zhang, L. Q.; Xu, C. L.; Li, B. S.; Zhang, C. H.
刊名	APPLIED SURFACE SCIENCE
	2011-08-15
卷号	257 期号:21 页码:9183-9187
关键词	Ion implantation Annealing Bubbles Defects Transmission electron microscopy
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2011.05.129
英文摘要	The annealing effects of crystalline silicon (Si) implanted with argon (Ar) ions at a dose of 2 x 10(16) Ar(+)/cm(2) at room temperature and subsequently annealed at 400-1100 degrees C for 30 min were investigated. The samples were analyzed by transmission electron microscopy and Raman spectroscopy. Before and after annealing up to 600 degrees C, an amorphous layer is formed but Ar bubbles are not observed in the damage layer. After annealing at 800 degrees C, argon bubbles are observed together with extended defects. The damage layer evolves into a polycrystalline structure. After annealing at 1100 degrees C; exfoliation occurs on the sample surface, and microtwin lamellas form in the damage layer. Raman scattering revealed that a strong recrystallization occurs from 600 degrees C to 800 degrees C. The results were compared with the case of helium implantation, with particular focus on bubble formation mechanisms. (C) 2011 Elsevier B.V. All rights reserved.
资助项目	National Nature Science Foundation of China[11505130] ; National Nature Science Foundation of China[10979063]
WOS关键词	VACANCY-TYPE DEFECTS ; ION-IMPLANTATION ; HELIUM IMPLANTATION ; INDUCED CAVITIES ; ARGON-ION ; SILICON ; TECHNOLOGY ; VOIDS
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000292539700067
资助机构	National Nature Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.impcas.ac.cn/handle/113462/15011]
专题	近代物理研究所_能源材料研究组
通讯作者	Li, B. S.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Yang, Y. T.,Zhang, L. Q.,Xu, C. L.,et al. Microstructural evolution upon annealing in Ar-implanted Si[J]. APPLIED SURFACE SCIENCE,2011,257(21):9183-9187.
APA	Yang, Y. T.,Zhang, L. Q.,Xu, C. L.,Li, B. S.,&Zhang, C. H..(2011).Microstructural evolution upon annealing in Ar-implanted Si.APPLIED SURFACE SCIENCE,257(21),9183-9187.
MLA	Yang, Y. T.,et al."Microstructural evolution upon annealing in Ar-implanted Si".APPLIED SURFACE SCIENCE 257.21(2011):9183-9187.