The effects of swift heavy-ion irradiation on helium-ion-implanted silicon

doi:10.1016/j.nimb.2014.07.010

	The effects of swift heavy-ion irradiation on helium-ion-implanted silicon
	Li, B. S.; Du, Y. Y.; Wang, Z. G.; Shen, T. L.; Li, Y. F.; Yao, C. F.; Sun, J. R.; Cui, M. H.; Wei, K. F.; Zhang, H. P.
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2014-10-15
卷号	337 页码:21-26
关键词	He Bubbles Ar-ion Irradiation Strong Electronic Excitation Microstructure
ISSN号	0168-583X
DOI	10.1016/j.nimb.2014.07.010
文献子类	Article
英文摘要	Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. (100)-oriented silicon wafers were implanted with 30 key helium to a dose of 3 x 10(16) He/cm(2) at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed. (C) 2014 Elsevier B.V. All rights reserved.
资助项目	National Basic Research Program of China[2010 CB832904]
WOS关键词	BEAM IRRADIATION ; HE IMPLANTATION ; SI ; VOIDS ; NANOCAVITIES ; DIFFUSION ; CAVITIES ; DISLOCATIONS ; TEMPERATURE ; TECHNOLOGY
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000342267000005
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/49707]
专题	中国科学院近代物理研究所
通讯作者	Li, B. S.
作者单位	Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Li, B. S.,Du, Y. Y.,Wang, Z. G.,et al. The effects of swift heavy-ion irradiation on helium-ion-implanted silicon[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2014,337:21-26.
APA	Li, B. S..,Du, Y. Y..,Wang, Z. G..,Shen, T. L..,Li, Y. F..,...&Pang, L. L..(2014).The effects of swift heavy-ion irradiation on helium-ion-implanted silicon.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,337,21-26.
MLA	Li, B. S.,et al."The effects of swift heavy-ion irradiation on helium-ion-implanted silicon".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 337(2014):21-26.