Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C

doi:10.1016/j.nimb.2019.06.009

	Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C
	Li, Bingsheng2 ; Liu, Yuzhu 1; Liu, Huiping3 ; Kang, Long 3; Xiong, Anli 2
刊名	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
	2019-09-01
卷号	454 页码:45-49
关键词	GaN He ion implantation Microstructure Extended defects
ISSN号	0168-583X
DOI	10.1016/j.nimb.2019.06.009
通讯作者	Li, Bingsheng(libingshengmvp@163.com)
英文摘要	Microstructure of extended defects in He-implanted GaN upon thermal annealing at temperature of 450 degrees C is studied. Before and after annealing, the samples are examined via cross-sectional transmission electron microscopy (XTEM) analysis. After annealing, extended defects, such as dislocation loops, stacking faults, tangled dislocations, and He bubbles are visible. Some extended defects diffuse toward the sample surface. Atomic structures of observed extended defects are investigated by high-resolution transmission electron microscopy (HRTEM). The research results are good for understanding the irradiation damage in GaN.
资助项目	National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11475229] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS关键词	ATOMIC CONFIGURATIONS ; FRACTURE ; HELIUM ; MODEL ; IONS
WOS研究方向	Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000474316800007
资助机构	National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/133073]
专题	中国科学院近代物理研究所
通讯作者	Li, Bingsheng
作者单位	1.Nanjing Univ Informat Sci & Technol, Jiansu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China 2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式 GB/T 7714	Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,et al. Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,454:45-49.
APA	Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,Kang, Long,&Xiong, Anli.(2019).Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,454,45-49.
MLA	Li, Bingsheng,et al."Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 454(2019):45-49.