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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of window layer thickness on double layer antireflection coating for triple junction solar cells 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 6, 页码: 66001 Wang, Lijuan; Zhan, Feng; Yu, Ying; Zhu, Yan; Liu, Shaoqing; Huang, Shesong; Ni, Haiqiao; Niu, Zhichuan 收藏  |  浏览/下载：21/0  |  提交时间：2012/06/14 Antireflection coatings  Coatings  Gallium  Optimization  Silicon compounds  Titanium dioxide  Transfer matrix method  Zinc sulfide   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：70/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105 作者:  Zhang XW;  Yin ZG;  You JB 收藏  |  浏览/下载：99/13  |  提交时间：2010/03/08 atomic force microscopy  field emission  hydrogen  II-VI semiconductors  plasma materials processing  sputter deposition  wide band gap semiconductors  work function  zinc compounds   Temperature and pressure dependences of the copper-related green emission in ZnO microrods 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 1, 页码: art.no.013107 Su FH (Su F. H.); Liu YF (Liu Y. F.); Chen W (Chen W.); Wang WJ (Wang W. J.); Ding K (Ding K.); Li GH (Li G. H.); Joly AG (Joly A. G.); McCready DE (McCready D. E.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 ZINC-OXIDE  OPTICAL-PROPERTIES  PHOTOLUMINESCENCE  LUMINESCENCE  IMPURITIES  NANOWIRES  SAPPHIRE  GROWTH  BAND  CU   Pressure behavior of Te isoelectronic centers in ZnS : Te 期刊论文 applied physics letters, 2002, 卷号: 81, 期号: 17, 页码: 3170-3172 Fang ZL; Su FH; Ma BS; Ding K; Han HX; Li GH; Sou IK; Ge WK 收藏  |  浏览/下载：44/0  |  提交时间：2010/08/12 HYDROSTATIC-PRESSURE  OPTICAL-ABSORPTION  BOUND EXCITONS  ZINC-SULFIDE  LUMINESCENCE  PHOTOLUMINESCENCE  CRYSTALS  ALLOYS