Pressure behavior of Te isoelectronic centers in ZnS : Te

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	Pressure behavior of Te isoelectronic centers in ZnS : Te
	Fang ZL ; Su FH ; Ma BS ; Ding K ; Han HX ; Li GH ; Sou IK ; Ge WK
刊名	applied physics letters
	2002
卷号	81 期号:17 页码:3170-3172
关键词	HYDROSTATIC-PRESSURE OPTICAL-ABSORPTION BOUND EXCITONS ZINC-SULFIDE LUMINESCENCE PHOTOLUMINESCENCE CRYSTALS ALLOYS
ISSN号	0003-6951
通讯作者	fang zl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	zns:te epilayers with te concentration from 0.5% to 3.1% were studied by photoluminescence under hydrostatic pressure at 15 k. two emission bands related to the isolated te-1 and te-2 pair isoelectronic centers were observed in the samples with te concentrations of 0.5% and 0.65%. for the samples with te concentrations of 1.4% and 3.1%, only the te-2-related peak was observed. the pressure coefficients of all the te-1-related bands were found to be unexpectedly much larger than that of the zns band gap. the pressure coefficients for all the te-2-related bands are, however, rather smaller than that of zns band gap as usually observed. analysis based on a koster-slater model indicates that an increase of the valence bandwidth with pressure is the main reason for the faster pressure shift of the te-1 centers, and the huge difference in the pressure behavior of the te-1 and te-2 centers is due mainly to the difference in the pressure-induced enhancement of the impurity potential on the te-1 and te-2 centers. (c) 2002 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11770]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fang ZL,Su FH,Ma BS,et al. Pressure behavior of Te isoelectronic centers in ZnS : Te[J]. applied physics letters,2002,81(17):3170-3172.
APA	Fang ZL.,Su FH.,Ma BS.,Ding K.,Han HX.,...&Ge WK.(2002).Pressure behavior of Te isoelectronic centers in ZnS : Te.applied physics letters,81(17),3170-3172.
MLA	Fang ZL,et al."Pressure behavior of Te isoelectronic centers in ZnS : Te".applied physics letters 81.17(2002):3170-3172.