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半导体研究所 [10]

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半导体物理 [10]

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限定条件	学科主题：半导体物理

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	Highly Reproducible Nanolithography by Dynamic Plough of an Atomic-Force Microscope Tip and Thermal-Annealing Treatment 期刊论文 ieee transactions on nanotechnology, 2011, 卷号: 10, 期号: 1, 页码: 53-58 Lu XF; Balocco C; Yang FH; Song AM 收藏 \| 浏览/下载：71/7 \| 提交时间：2011/07/05 Atomic-force microscope (AFM) nanolithography self-switching diodes (SSDs) 2-D electron gas CONDUCTING POLYMER-FILMS NANOMETER-SCALE LITHOGRAPHY FABRICATION SURFACES DEVICES NANOSTRUCTURES
	Resonant subband Landau level coupling in symmetric quantum well 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083502 Tung LC (Tung L. -C.); Wu XG (Wu X. -G.); Pfeiffer LN (Pfeiffer L. N.); West KW (West K. W.); Wang YJ (Wang Y. -J.) 收藏 \| 浏览/下载：29/0 \| 提交时间：2010/12/05 TILTED MAGNETIC-FIELDS ELECTRON-GAS DEPOLARIZATION SHIFT CYCLOTRON-RESONANCE MATRIX-ELEMENTS HETEROJUNCTIONS SPECTROSCOPY TECHNOLOGY ABSORPTION SYSTEMS
	Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076401 Wang TT (Wang Ting-Ting); Li WL (Li Wen-Long); Chen ZH (Chen Zhang-Hui); Miao L (Miao Ling) 收藏 \| 浏览/下载：94/1 \| 提交时间：2010/08/17 density functional theory neural network genetic algorithm alternate combination LINEAR-REGRESSION CORRECTION TRAINING SET ELECTRON-GAS PREDICTION APPROXIMATION DESCRIPTORS ACCURATE ENERGY HEAT
	Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者: Qian X 收藏 \| 浏览/下载：80/7 \| 提交时间：2010/03/08 aluminium compounds carrier lifetime gallium arsenide high-frequency effects III-V semiconductors optical Kerr effect semiconductor heterojunctions spin dynamics two-dimensional electron gas
	Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well 期刊论文 acta physica sinica, 2008, 卷号: 57, 期号: 8, 页码: 5232-5236 Shang, LY; Lin, T; Zhou, WZ; Li, DL; Gao, HL; Zeng, YP; Guo, SL; Yu, GL; Chu, JH 收藏 \| 浏览/下载：86/0 \| 提交时间：2010/03/08 two-dimensional electron gas positive magnetoresistance intersubband scattering
	Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏 \| 浏览/下载：61/0 \| 提交时间：2010/03/08 aluminium compounds dislocation density electron mobility gallium compounds III-V semiconductors interface roughness semiconductor heterojunctions two-dimensional electron gas wide band gap semiconductors
	Tuning of plasmon propagation in two-dimensional electrons 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: art. no. 251501 Li C; Wu XG 收藏 \| 浏览/下载：224/75 \| 提交时间：2010/03/08 field effect transistors plasmons semiconductor heterojunctions spin-orbit interactions two-dimensional electron gas
	Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands 期刊论文 acta physica sinica, 2008, 卷号: 57, 期号: 4, 页码: 2481-2485 Li-Yan, S; Tie, L; Wen-Zheng, Z; Zhi-Ming, H; Dong-Lin, L; Hong-Ling, G; Li-Jie, C; Yi-Ping, Z; Shao-Ling, G; Jun-Hao, C 收藏 \| 浏览/下载：64/0 \| 提交时间：2010/03/08 two-dimensional electron gas scattering time self-consistent calculation
	Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 4, 页码: 2044-2048 Zhou WZ; Yao W; Zhu B; Qiu ZJ; Guo SL; Lin T; Cui LJ; Gui YS; Chu JH 收藏 \| 浏览/下载：57/0 \| 提交时间：2010/04/11 InAlAs/InGaAs single quantum well SdH oscillation two-dimensional electron gas magneto-intersubband scattenng ALLOY SCATTERING HETEROJUNCTIONS HEMTS OSCILLATIONS TRANSPORT
	Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者: Han PD 收藏 \| 浏览/下载：16/0 \| 提交时间：2010/10/29 AlGaN/GaN heterostructures In-doping 2DEG electron sheet density X-ray diffraction etching CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY PHASE EPITAXY MOBILITY GROWTH FILMS

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