Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands

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	Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands
	Li-Yan, S ; Tie, L ; Wen-Zheng, Z ; Zhi-Ming, H ; Dong-Lin, L ; Hong-Ling, G ; Li-Jie, C ; Yi-Ping, Z ; Shao-Ling, G ; Jun-Hao, C
刊名	acta physica sinica
	2008
卷号	57 期号:4 页码:2481-2485
关键词	two-dimensional electron gas scattering time self-consistent calculation
ISSN号	1000-3290
通讯作者	li-yan, s, chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china.
中文摘要	magnetotransport properties of two-dimensional electron gas have been investigated for three in0.53ga0.47as/in0.52al0.48as quantum well samples having two occupied subbands with different well widths. when the intersubband scattering is considered, we have obtained the subband density, transport scattering time, quantum scattering time and intersubband scattering time, respectively, by analyzing the result of fast fourier transform of the first derivative of shubnikov-de haas oscillations. it is found that the main scattering mechanism is due to small-angle scattering, such as ionized impurity scattering, for the first subband electrons.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6744]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li-Yan, S,Tie, L,Wen-Zheng, Z,et al. Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands[J]. acta physica sinica,2008,57(4):2481-2485.
APA	Li-Yan, S.,Tie, L.,Wen-Zheng, Z.,Zhi-Ming, H.,Dong-Lin, L.,...&Jun-Hao, C.(2008).Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands.acta physica sinica,57(4),2481-2485.
MLA	Li-Yan, S,et al."Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands".acta physica sinica 57.4(2008):2481-2485.