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Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction 期刊论文
Japanese Journal of Applied Physics, 2017, 卷号: 56, 期号: 4, 页码: 04CD07
作者:  Hongjuan Wang;  Genquan Han;  Xiangwei Jiang;  Yan Liu;  Chunfu Zhang
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/15
Response of MoS2 nanosheet field effect transistor under different gas environments and its long wavelength photoresponse characteristics 期刊论文
journal of alloys and compounds, 2014, 卷号: 615, 页码: 989-993
Wang, Xiaozhou; Yang, Shengxue; Yue, Qu; Wu, Fengmin; Li, Jingbo
收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19
Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 10, 页码: 104209
Dong, Y; Wang, GL; Wang, HP; Ni, HQ; Chen, JH; Gao, FQ; Qiao, ZT; Yang, XH; Niu, ZC
收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载：159/62  |  提交时间：2010/03/08
A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs 期刊论文
ieee transactions on electron devices, 2008, 卷号: 55, 期号: 7, 页码: 1720-1726
Jiang, XW; Deng, HX; Luo, JW; Li, SS; Wang, LW
收藏  |  浏览/下载：153/1  |  提交时间：2010/03/08
Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG
收藏  |  浏览/下载：54/6  |  提交时间：2010/03/08
Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507
Deng, HX; Jiang, XW; Luo, JW; Li, SS; Xia, JB; Wang, LW
收藏  |  浏览/下载：65/5  |  提交时间：2010/03/08
Tuning of plasmon propagation in two-dimensional electrons 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: art. no. 251501
Li C; Wu XG
收藏  |  浏览/下载：224/75  |  提交时间：2010/03/08

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