Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

	Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction
	Hongjuan Wang; Genquan Han; Xiangwei Jiang; Yan Liu; Chunfu Zhang; Jincheng Zhang; and Yue Hao
刊名	Japanese Journal of Applied Physics
	2017
卷号	56 期号:4 页码:04CD07
学科主题	半导体物理
公开日期	2018-06-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28555]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Hongjuan Wang,Genquan Han,Xiangwei Jiang,et al. Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction[J]. Japanese Journal of Applied Physics,2017,56(4):04CD07.
APA	Hongjuan Wang.,Genquan Han.,Xiangwei Jiang.,Yan Liu.,Chunfu Zhang.,...&and Yue Hao.(2017).Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction.Japanese Journal of Applied Physics,56(4),04CD07.
MLA	Hongjuan Wang,et al."Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction".Japanese Journal of Applied Physics 56.4(2017):04CD07.