A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs
	Jiang, XW ; Deng, HX ; Luo, JW ; Li, SS ; Wang, LW
刊名	ieee transactions on electron devices
	2008
卷号	55 期号:7 页码:1720-1726
关键词	dopant fluctuation linear combination of bulk band (LCBB) MOSFET quantum mechanical threshold 3-D
ISSN号	0018-9383
通讯作者	jiang, xw, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: xwjiang@semi.ac.cn ; lwwang@lbl.gov
中文摘要	a fully 3-d atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. the empirical pseudopotential is used to represent the single particle hamiltonian, and the linear combination of bulk band method is used to solve the million atom schrodinger equation. the gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. it is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. the increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. however, the decrease in threshold lowering is in contrast with the density gradient calculations.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6582]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang, XW,Deng, HX,Luo, JW,et al. A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs[J]. ieee transactions on electron devices,2008,55(7):1720-1726.
APA	Jiang, XW,Deng, HX,Luo, JW,Li, SS,&Wang, LW.(2008).A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs.ieee transactions on electron devices,55(7),1720-1726.
MLA	Jiang, XW,et al."A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs".ieee transactions on electron devices 55.7(2008):1720-1726.