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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：48/5  |  提交时间：2011/07/05
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 10, 页码: 10-12
作者:  Zhang Yu
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/23
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08
QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders 期刊论文
ultramicroscopy, 2008, 卷号: 108, 期号: 12, 页码: 1540-1545
Zhao HS; Wu DQ; Yao JC; Chang AM
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/08
Bioactivity of Mg-ion-implanted zirconia and titanium 期刊论文
applied surface science, 2007, 卷号: 253, 期号: 6, 页码: 3326-3333
Liang H; Wan YZ; He F; Huang Y; Xu JD; Li JM; Wang YL; Zhao ZG
收藏  |  浏览/下载：22/0  |  提交时间：2010/03/29
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507
Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo)
收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29

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