Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

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	Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition
	Yang H; Zhao DG; Zhu JJ; Yang H; Zhang SM; Jiang DS
刊名	journal of crystal growth
	2008
卷号	310 期号:24 页码:5266-5269
关键词	Cathodoluminescence MOCVD AlGaN
ISSN号	0022-0248
通讯作者	zhao dg chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: dgzhao@red.semi.ac.cn
中文摘要	we have investigated the optical properties of algan grown on sapphire. it is found that two main luminescence peaks occur in the cathodoluminescence (cl) spectra of algan films, and their energy separation increases with the increase of al source flux during the growth. spatially resolved cl investigations have shown that the line splitting is a result of variation of aln mole fraction within the layer. the al composition varies in both lateral and vertical direction. it is suggested that the difference in the surface mobility of al and ga atoms, especially, its strong influence on the initial island coalescence process and the formation of island-like regions on the uneven film surface, is responsible for the al composition inhomogeneity. (c) 2008 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
资助信息	national natural science foundation of china 60776047 605060016047602160576003national basic research program of china 2007cb936700 national high technology research and development program of china 2007aa03z401 the authors acknowledge the support from the national natural science foundation of china (grant nos. 60776047, 60506001. 60476021, and 60576003), the national basic research program of china (grant no. 2007cb936700) and the national high technology research and development program of china (grant no. 2007aa03z401).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7439]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Zhao DG,Zhu JJ,et al. Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition[J]. journal of crystal growth,2008,310(24):5266-5269.
APA	Yang H,Zhao DG,Zhu JJ,Yang H,Zhang SM,&Jiang DS.(2008).Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition.journal of crystal growth,310(24),5266-5269.
MLA	Yang H,et al."Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition".journal of crystal growth 310.24(2008):5266-5269.