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科研机构
半导体研究所 [9]
内容类型
期刊论文 [6]
会议论文 [3]
发表日期
2011 [1]
2007 [1]
2006 [3]
2004 [2]
2000 [1]
1999 [1]
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半导体材料 [9]
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao)
;
Wang XL (Wang Xiaoliang)
;
Xiao HL (Xiao Hongling)
;
Hu GX (Hu Guoxin)
;
Wang CM (Wang Cuimei)
;
Wang XY (Wang Xiaoyan)
;
Li JP (Li Jianping)
;
Wang JX (Wang Junxi)
;
Li CJ (Li Chengji)
;
Zeng YP (Zeng Yiping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang Zanguo)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/03/29
deep defect
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen)
;
Dong, ZY (Dong, Zhiyuan)
;
Dong, HW (Dong, Hongwei)
;
Sun, NF (Sun, Niefeng)
;
Sun, TN (Sun, Tongnian)
收藏
  |  
浏览/下载:61/12
  |  
提交时间:2010/03/29
STIMULATED CURRENT SPECTROSCOPY
CURRENT TRANSIENT SPECTROSCOPY
FE-DOPED INP
POINT-DEFECTS
COMPENSATION
TEMPERATURE
DONORS
TRAPS
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Annealing ambient controlled deep defect formation in InP
会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
Zhao YW
;
Dong ZY
;
Duan ML
;
Sun WR
;
Zeng YP
;
Sun NF
;
Sun TN
收藏
  |  
浏览/下载:20/1
  |  
提交时间:2010/10/29
FE-DOPED INP
SEMIINSULATING INP
POINT-DEFECTS
PRESSURE
WAFERS
TRAPS
Liquid phase epitaxy of Al0.3Ga0.7As islands
期刊论文
journal of crystal growth, 2004, 卷号: 270, 期号: 1-2, 页码: 38-41
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
;
Zhang, HZ
收藏
  |  
浏览/下载:423/56
  |  
提交时间:2010/03/09
crystal morphology
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells
期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Zhang MH
;
Han YJ
;
Zhang YH
;
Huang Q
;
Bao CL
;
Wang WX
;
Zhou JM
;
Lu LW
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/08/12
LT-GaAs
LT MQWs
defect
photoluminescence
electroabsorption
SPATIAL LIGHT MODULATORS
MOLECULAR-BEAM EPITAXY
GAAS
RECOMBINATION
DYNAMICS
High quality hydrogenated amorphous silicon films with significantly improved stability
会议论文
symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/10/29
A-SI-H
LIGHT SOAKING
PHOTOCONDUCTIVITY
INCREASE
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