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	High quality hydrogenated amorphous silicon films with significantly improved stability
	Sheng SR ; Liao XB ; Ma ZX ; Yue GZ ; Wang YQ ; Kong GL
	1999
会议名称	symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting
会议日期	apr 14-17, 1998
会议地点	san francisco, ca
关键词	A-SI-H LIGHT SOAKING PHOTOCONDUCTIVITY INCREASE
页码	969-974
通讯作者	sheng sr chinese acad sci state lab surface phys inst semicond beijing 100083 peoples r china.
中文摘要	high quality hydrogenated amorphous silicon (a-si:h) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (pecvd) technique, combined with a subtle boron-compensated doping. these a-si:h films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. the central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the fermi level close to the midgap. our results show that the improved stability and photosensitivity of a-si:h films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.
英文摘要	high quality hydrogenated amorphous silicon (a-si:h) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (pecvd) technique, combined with a subtle boron-compensated doping. these a-si:h films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. the central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the fermi level close to the midgap. our results show that the improved stability and photosensitivity of a-si:h films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:06z (gmt). no. of bitstreams: 1 2977.pdf: 400270 bytes, checksum: 72f05f23a08943ecad002dfd73a63447 (md5) previous issue date: 1999; mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc.; chinese acad sci, state lab surface phys, inst semicond, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	mat res soc.; akzo nobel.; dpix a xerox co.; fuji elect corp res & dev ltd.; kaneka corp.; mitsui chem co ltd.; naps france.; natl renewable energy lab.; sanyo elect co ltd.; tokuyama corp.; voltaix inc.
会议录	amorphous and microcrystalline silicon technology-1998, 507
会议录出版者	materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa
会议录出版地	506 keystone drive, warrendale, pa 15088-7563 usa
学科主题	半导体材料
语种	英语
ISSN号	0272-9172
ISBN号	1-55899-413-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13799]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sheng SR,Liao XB,Ma ZX,et al. High quality hydrogenated amorphous silicon films with significantly improved stability[C]. 见:symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting. san francisco, ca. apr 14-17, 1998.

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