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浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文 electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191- Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 LIGHT-EMITTING-DIODES  SPECTRUM   Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion 期刊论文 organic electronics, 2011, 卷号: 12, 期号: 12, 页码: 2090-2094 Guan M (Guan Min); Li LS (Li LinSen); Cao GH (Cao GuoHua); Zhang Y (Zhang Yang); Wang BQ (Wang BaoQiang); Chu XB (Chu Xinbo); Zhu ZP (Zhu ZhanPing); Zeng YP (Zeng YiPing) 收藏  |  浏览/下载：25/0  |  提交时间：2012/02/22 Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 FUNDAMENTAL-BAND GAP  INDIUM NITRIDE  BUFFER LAYER  DEPENDENCE  SAPPHIRE  MOCVD   Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06 LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  BAND-GAP  MG  PHOTOLUMINESCENCE  INGAN  DEPENDENCE  STRAIN  ENERGY  INN   Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文 applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143 Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG 收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28 BAND-GAP  TEMPERATURE-DEPENDENCE  ENERGY  SEMICONDUCTORS  SPECTRA  EPITAXY  GROWTH  LAYERS   Study of GaN growth on ultra-thin Si membranes 期刊论文 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 986-989 Wang X; Wu AM; Chen J; Wang X; Wu YX; Zhu JJ; Yang H 收藏  |  浏览/下载：58/2  |  提交时间：2010/03/08 GaN   High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929 Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM 收藏  |  浏览/下载：77/1  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMTs  SiC  power   Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching 期刊论文 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 962-967 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH 收藏  |  浏览/下载：58/4  |  提交时间：2010/03/08 InGaN/GaN multiple quantum wells  light-emitting diode  wet etching  inductively coupled plasma etching   Influence of different interlayers on growth mode and properties of InN by MOVPE 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 1, 页码: 238-241 Zhang, RQ; Liu, XL; Kang, TT; Hu, WG; Yang, SY; Jiao, CM; Zhu, QS 收藏  |  浏览/下载：51/3  |  提交时间：2010/03/08 DEFECT STRUCTURE  EPITAXIAL GAN  BAND-GAP   High-precision determination of lattice constants and structural characterization of InN thin films 期刊论文 journal of vacuum science & technology a, 2006, 卷号: 24, 期号: 2, 页码: 275-279 Wu MF; Zhou SQ; Vantomme A; Huang Y; Wang H; Yang H 收藏  |  浏览/下载：108/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  BAND-GAP  EPITAXIAL LAYERS  INDIUM NITRIDE  HEXAGONAL INN  CUBIC INN  GROWTH  PARAMETERS  INGAN  PHASE