High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

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	High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz
	Wang, XL ; Chen, TS ; Xiao, HL ; Wang, CM ; Hu, GX ; Luo, WJ ; Tang, J ; Guo, LC ; Li, JM
刊名	solid-state electronics
	2008
卷号	52 期号:6 页码:926-929
关键词	AlGaN/AlN/GaN HEMTs SiC power
ISSN号	0038-1101
通讯作者	luo, wj, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. 电子邮箱地址: luoweijun@mail.semi.ac.cn
中文摘要	optimized algan/aln/gan high electron mobility transistors (hemts) structures were grown on 2-in semi-insulating (si) 6h-sic substrate by metal-organic chemical vapor deposition (mocvd). the 2-in. hemt wafer exhibited a low average sheet resistance of 305.3 omega/sq with a uniformity of 3.85%. the fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum dc current density of 1360 ma/mm, a transconductance of 460 ms/mm, a breakdown voltage larger than 80 v, a current gain cut-off frequency of 24 ghz and a maximum oscillation frequency of 34 ghz. under the condition of continuous-wave (cw) at 9 ghz, the device achieved 18.1 w output power with a power density of 9.05 w/mm and power-added-efficiency (pae) of 36.4%. while the corresponding results of pulse condition at 8 ghz are 22.4 w output power with 11.2 w/mm power density and 45.3% pae. these are the state-of-the-art power performance ever reported for this physical dimension of gan hemts based on sic substrate at 8 ghz. (c) 2008 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6608]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang, XL,Chen, TS,Xiao, HL,et al. High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz[J]. solid-state electronics,2008,52(6):926-929.
APA	Wang, XL.,Chen, TS.,Xiao, HL.,Wang, CM.,Hu, GX.,...&Li, JM.(2008).High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz.solid-state electronics,52(6),926-929.
MLA	Wang, XL,et al."High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz".solid-state electronics 52.6(2008):926-929.