Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

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	Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
	Liu B ; Zhang Z ; Zhang R ; Fu DY ; Xie ZL ; Lu H ; Schaff WJ ; Song LH ; Cui YC ; Hua XM ; Han P ; Zheng YD ; Chen YH ; Wang ZG
刊名	applied physics a-materials science & processing
	2010
卷号	99 期号:1 页码:139-143
关键词	BAND-GAP TEMPERATURE-DEPENDENCE ENERGY SEMICONDUCTORS SPECTRA EPITAXY GROWTH LAYERS
通讯作者	zhang, r, nanjing univ, dept phys, jiangsu prov key lab adv photon & elect mat, nanjing natl lab microstruct, nanjing 210093, peoples r china. 电子邮箱地址: rzhang@nju.edu.cn
合作状况	国内
英文摘要	inn films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (mocvd) and molecular beam epitaxy (mbe) were investigated by variable-temperature photoluminescence and absorption measurements. the energy positions of absorption edge as well as photoluminescence peak of these inn samples with electron concentration above 10(18) cm(-3) show a distinct s-shape temperature dependence. with a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. the exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in inn with high electron concentrations.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-28t14:00:34z no. of bitstreams: 1 electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films.pdf: 441370 bytes, checksum: 409ff44bb7c0b508538971df2d2499bc (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-28t14:06:42z (gmt) no. of bitstreams: 1 electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films.pdf: 441370 bytes, checksum: 409ff44bb7c0b508538971df2d2499bc (md5); made available in dspace on 2010-04-28t14:06:42z (gmt). no. of bitstreams: 1 electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in inn films.pdf: 441370 bytes, checksum: 409ff44bb7c0b508538971df2d2499bc (md5) previous issue date: 2010; special funds for major state basic research project 973 2006cb6049 national nature science foundation of china 60721063 60731160628 60676057 60820106003 60906025 60990311 nature science foundation of jiangsu province bk2008019 bk2009255 nju- yangzhou institute of opto-electronics; 国内
学科主题	半导体材料
收录类别	SCI
资助信息	special funds for major state basic research project 973 2006cb6049 national nature science foundation of china 60721063 60731160628 60676057 60820106003 60906025 60990311 nature science foundation of jiangsu province bk2008019 bk2009255 nju- yangzhou institute of opto-electronics
语种	英语
公开日期	2010-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11212]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu B,Zhang Z,Zhang R,et al. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films[J]. applied physics a-materials science & processing,2010,99(1):139-143.
APA	Liu B.,Zhang Z.,Zhang R.,Fu DY.,Xie ZL.,...&Wang ZG.(2010).Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films.applied physics a-materials science & processing,99(1),139-143.
MLA	Liu B,et al."Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films".applied physics a-materials science & processing 99.1(2010):139-143.