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科研机构
半导体研究所 [39]
内容类型
期刊论文 [33]
会议论文 [6]
发表日期
2011 [3]
2010 [4]
2009 [1]
2008 [2]
2007 [3]
2006 [6]
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半导体材料 [39]
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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:
Deng QW
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浏览/下载:47/5
  |  
提交时间:2011/07/05
QUANTUM-WELL-STRUCTURE
ALGAN/GAN HETEROSTRUCTURE
YELLOW LUMINESCENCE
DEEP LEVELS
TRAP
PERFORMANCE
FREQUENCY
EPILAYERS
ORIGIN
DIODES
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
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  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
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  |  
浏览/下载:260/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN
Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO
期刊论文
acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784
Dong JJ (Dong J. J.)
;
Zhang XW (Zhang X. W.)
;
You JB (You J. B.)
;
Cai PF (Cai P. F.)
;
Yin ZG (Yin Z. G.)
;
An Q (An Q.)
;
Ma XB (Ma X. B.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
;
Chu PK (Chu Paul K.)
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浏览/下载:151/22
  |  
提交时间:2010/07/05
hydrogen plasma treatment
zinc oxide
Raman spectroscopy
photoluminescence
RAMAN-SCATTERING
IMPLANTED ZNO
THIN-FILMS
DENSITY
Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057305
Peng YC (Peng Ying-Cai)
;
Fan ZD (Fan Zhi-Dong)
;
Bai ZH (Bai Zhen-Hua)
;
Zhao XW (Zhao Xin-Wei)
;
Lou JZ (Lou Jian-Zhong)
;
Cheng X (Cheng Xu)
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  |  
浏览/下载:159/35
  |  
提交时间:2010/05/24
POROUS SILICON
MECHANISM
EMISSION
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng)
;
Wang XL (Wang Xiao-Liang)
;
Xiao
;
HL (Xiao Hong-Ling)
;
Wang CM (Wang Cui-Mei)
;
Yang CB (Yang Cui-Bai)
;
Li JM (Li Jin-Min)
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  |  
浏览/下载:255/64
  |  
提交时间:2010/05/24
N-TYPE GAN
DEEP LEVELS
SELENIDE
DEFECTS
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
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浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
First-principles study of native defects in rutile TiO2
期刊论文
physics letters a, 2008, 卷号: 372, 期号: 9, 页码: 1527-1530
Peng, H
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浏览/下载:86/28
  |  
提交时间:2010/03/08
defects
rutile
TiO2
first-principles
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
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  |  
浏览/下载:51/0
  |  
提交时间:2010/03/08
defects
X-ray diffraction
growth from vapor
oxides
semiconducting II-VI materials
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