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Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载:38/3  |  提交时间:2011/07/05
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment 期刊论文
physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76
作者:  You JB;  Zhang XW
收藏  |  浏览/下载:49/4  |  提交时间:2011/07/05
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb 期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.); Hasan MM (Hasan M. M.); Chen N (Chen N.); Fukuzawa M (Fukuzawa M.); Yamada M (Yamada M.)
收藏  |  浏览/下载:261/25  |  提交时间:2010/09/20
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载:196/52  |  提交时间:2010/04/28
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films 期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.); Zhang XW (Zhang X. W.); Fan YM (Fan Y. M.); Tan HR (Tan H. R.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载:27/0  |  提交时间:2010/12/28
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载:41/0  |  提交时间:2010/03/09
Mn-AlInN: a new diluted magnetic semiconductor 期刊论文
applied physics a-materials science & processing, 2009, 卷号: 96, 期号: 4, 页码: 979-984
Majid A; Sharif R; Zhu JJ; Ali A
收藏  |  浏览/下载:67/4  |  提交时间:2010/03/08
FILMS  GROWTH  GAN  CR  
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载:236/104  |  提交时间:2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载:94/1  |  提交时间:2010/03/08
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载:44/0  |  提交时间:2010/03/09


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