×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [48]
内容类型
期刊论文 [38]
会议论文 [10]
发表日期
2011 [2]
2010 [3]
2009 [3]
2008 [4]
2007 [5]
2006 [4]
更多...
学科主题
半导体材料 [48]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共48条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:
Liu XF
;
Yan GG
;
Zheng L
;
Dong L
收藏
  |  
浏览/下载:38/3
  |  
提交时间:2011/07/05
4H-SiC
Raman scattering
LOPC modes
transport properties
SILICON-CARBIDE
LIGHT
GAP
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment
期刊论文
physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76
作者:
You JB
;
Zhang XW
收藏
  |  
浏览/下载:49/4
  |  
提交时间:2011/07/05
ZnO
LED
electroluminescence
hydrogen-plasma treatment
Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095010
Islam MR (Islam M. R.)
;
Hasan MM (Hasan M. M.)
;
Chen N (Chen N.)
;
Fukuzawa M (Fukuzawa M.)
;
Yamada M (Yamada M.)
收藏
  |  
浏览/下载:261/25
  |  
提交时间:2010/09/20
DILUTED MAGNETIC SEMICONDUCTORS
PHONON
FERROMAGNETISM
TEMPERATURE
GA1-XMNXAS
SPECTRA
STRAIN
LAYERS
GAAS
SPIN
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Mn-AlInN: a new diluted magnetic semiconductor
期刊论文
applied physics a-materials science & processing, 2009, 卷号: 96, 期号: 4, 页码: 979-984
Majid A
;
Sharif R
;
Zhu JJ
;
Ali A
收藏
  |  
浏览/下载:67/4
  |  
提交时间:2010/03/08
FILMS
GROWTH
GAN
CR
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
收藏
  |  
浏览/下载:236/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC
;
Wang, XL
;
Wang, CM
;
Mao, HL
;
Ran, JX
;
Luo, WJ
;
Wang, XY
;
Wang, BZ
;
Fang, CB
;
Hu, GX
收藏
  |  
浏览/下载:94/1
  |  
提交时间:2010/03/08
GaN
HEMT
2DEG
mobility
polarization
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
©版权所有 ©2017 CSpace - Powered by
CSpace