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| Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201
作者: Cao YL ; Yang T
  收藏 | 浏览/下载：18/0 | 提交时间：2011/07/05
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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T; Yang XG; Wang KF
收藏 | 浏览/下载：63/2 | 提交时间：2011/07/05
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| Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者: Yang T
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏 | 浏览/下载：57/2 | 提交时间：2011/07/05
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| The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者: Jin P; Ye XL; Zhou XL
收藏 | 浏览/下载：49/4 | 提交时间：2011/07/05
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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG
收藏 | 浏览/下载：42/3 | 提交时间：2011/07/05
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| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者: Li GK
收藏 | 浏览/下载：74/2 | 提交时间：2011/07/05
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| Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者: Pan X; Hou QF
收藏 | 浏览/下载：83/7 | 提交时间：2011/07/05
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| Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏 | 浏览/下载：40/4 | 提交时间：2011/07/05
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| Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment 期刊论文
physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76
作者: You JB; Zhang XW
收藏 | 浏览/下载：49/4 | 提交时间：2011/07/05
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