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Quantum Hall effect in black phosphorus two-dimensional electron system 期刊论文
nature nanotechnology, 2016, 卷号: 11, 期号: 7, 页码: 593-597
Likai Li; Fangyuan Yang; Guo Jun Ye; Zuocheng Zhang; Zengwei Zhu; Wenkai Lou; Xiaoying Zhou; Liang Li; Kenji Watanabe; Takashi Taniguchi; Kai Chang; YayuWang; Xian Hui Chen* and Yuanbo Zhang
收藏  |  浏览/下载：25/0  |  提交时间：2017/03/10
Multiple magnetic resonance of nuclei in a two-dimensional electron system 期刊论文
physical review b, 2016, 卷号: 93, 期号: 3, 页码: 035302
Xuan Qian; Yang Ji; Vladimir Umansky
收藏  |  浏览/下载：11/0  |  提交时间：2017/03/10
Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system 期刊论文
journal of physics: conference series, 2012, 卷号: 400, 期号: part 4, 页码: 042041
Ma, Hui; Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai
收藏  |  浏览/下载：17/0  |  提交时间：2013/04/19
Radiation modulation of circular photogalvanic effect in two-dimensional electron gas system 期刊论文
journal of physics: conference series, 2012, 卷号: 400, 期号: part 4, 页码: 042024
Jiang, Chongyun; Ma, Hui; Yu, Jinling; Liu, Yu; Chen, Yonghai
收藏  |  浏览/下载：15/0  |  提交时间：2013/05/13
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 23, 页码: art. no. 232116
作者:  Jiang CY;  Yu JL
收藏  |  浏览/下载：50/6  |  提交时间：2011/07/15
Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：17/0  |  提交时间：2010/12/28
Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106
Jiang CY; Ma H; Yu JL; Liu Y; Chen YH
收藏  |  浏览/下载：15/0  |  提交时间：2012/02/06
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：52/4  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12

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