Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system

	Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system
	Ma, Hui ; Jiang, Chongyun ; Liu, Yu ; Yu, Jinling ; Chen, Yonghai
刊名	journal of physics: conference series
	2012
卷号	400 期号:part 4 页码:042041
学科主题	半导体材料
收录类别	EI
语种	英语
公开日期	2013-04-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23903]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Ma, Hui,Jiang, Chongyun,Liu, Yu,et al. Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system[J]. journal of physics: conference series,2012,400(part 4):042041.
APA	Ma, Hui,Jiang, Chongyun,Liu, Yu,Yu, Jinling,&Chen, Yonghai.(2012).Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system.journal of physics: conference series,400(part 4),042041.
MLA	Ma, Hui,et al."Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system".journal of physics: conference series 400.part 4(2012):042041.