CORC

浏览/检索结果: 共40条,第1-10条 帮助

限定条件        
已选(0)清除 条数/页:   排序方式:
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG
收藏  |  浏览/下载:28/0  |  提交时间:2010/03/09
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G; Sun, GS; Ning, J; Liu, XF; Zhao, YM; Wang, L; Zhao, WS; Zeng, YP
收藏  |  浏览/下载:35/0  |  提交时间:2010/03/09
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 会议论文
21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005
Liao, XB (Liao, Xianbo); Du, WH (Du, Wenhui); Yang, XS (Yang, Xiesen); Povolny, H (Povolny, Henry); Xiang, XB (Xiang, Xianbi); Deng, XM (Deng, Xunming); Sun, K (Sun, Kai)
收藏  |  浏览/下载:267/77  |  提交时间:2010/03/29
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006
Gao, HY (Gao, Haiyong); Li, JM (Li, Jinmin)
收藏  |  浏览/下载:112/30  |  提交时间:2010/03/29
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载:167/71  |  提交时间:2010/03/29
ALN  IMPURITIES  DONOR  
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 会议论文
4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005
Yu, J; Kasper, E; Oehme, M
收藏  |  浏览/下载:146/20  |  提交时间:2010/03/29
SiGe  
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin)
收藏  |  浏览/下载:100/29  |  提交时间:2010/03/29
Growth and characterization of semi-insulating GaN films grown by MOCVD 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM
收藏  |  浏览/下载:202/36  |  提交时间:2010/03/29
MOCVD  
The study of high temperature annealing of a-SiC : H films 会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R
收藏  |  浏览/下载:209/71  |  提交时间:2010/03/29
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ
收藏  |  浏览/下载:132/26  |  提交时间:2010/03/29


©版权所有 ©2017 CSpace - Powered by CSpace