1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots

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	1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots
	Yu, J ; Kasper, E ; Oehme, M
	2006
会议名称	4th international conference on silicon epitaxy and heterostructures
会议日期	may 23-26, 2005
会议地点	awaji isl, japan
关键词	SiGe
页码	508 (1-2): 396-398
通讯作者	kasper, e, univ stuttgart, inst halbleitertech, pfaffenwaldring 47, d-70569 stuttgart, germany. 电子邮箱地址: kasper@iht.uni-stuttgart.de
中文摘要	self-assembly ge quantum dots (qd) on si and si/ge mutli-quantum-wells (mqw) are grown by mbe. the island size and island density was investigated by atomics force microscopy. ten-layer and twenty-layer mqw were selected for photodiode device fabrication. in photoluminescence (pl), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer mqw which had less defects than the 20-layer sample. resonant cavity enhanced (rce) photodiodes were fabricated by bonding on a soi wafer. selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 elsevier b.v. all rights reserved.
英文摘要	self-assembly ge quantum dots (qd) on si and si/ge mutli-quantum-wells (mqw) are grown by mbe. the island size and island density was investigated by atomics force microscopy. ten-layer and twenty-layer mqw were selected for photodiode device fabrication. in photoluminescence (pl), a broad peak around 1.55-mu m wavelength was observed with higher peak intensity for the 10-layer mqw which had less defects than the 20-layer sample. resonant cavity enhanced (rce) photodiodes were fabricated by bonding on a soi wafer. selected responsivity at 1.55 mu m was successfully demonstrated. (c) 2005 elsevier b.v. all rights reserved.; zhangdi于2010-03-29批量导入; zhangdi于2010-03-29批量导入; univ stuttgart, inst halbleitertech, d-70569 stuttgart, germany; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	其他
会议录	thin solid films
会议录出版者	elsevier science sa ; po box 564, 1001 lausanne, switzerland
会议录出版地	po box 564, 1001 lausanne, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0040-6090
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10022]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu, J,Kasper, E,Oehme, M. 1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots[C]. 见:4th international conference on silicon epitaxy and heterostructures. awaji isl, japan. may 23-26, 2005.