The study of high temperature annealing of a-SiC : H films

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	The study of high temperature annealing of a-SiC : H films
	Zhang, S ; Hu, Z ; Raniero, L ; Liao, X ; Ferreira, I ; Fortunato, E ; Vilarinho, P ; Perreira, L ; Martins, R
	2006
会议名称	3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm)
会议日期	mar 20-23, 2005
会议地点	aveiro, portugal
关键词	silicon carbide high temperature annealing thin film SILICON PECVD
页码	pts 1 and 2 514-516: 18-22 part 1-2
通讯作者	zhang, s, univ nova lisboa, fac ciencias & tecnol, dept ciencia mat, campus caparica, p-2829516 caparica, portugal. 电子邮箱地址: sz@uninova.pt
中文摘要	a series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. a very thin (around 15 a) gold film was evaporated on the half area of the asic:h films to investigate the metal induced crystallization effect. then the a-sic:h films were annealed at 1100 degrees c for 1 hour in the nitrogen atmosphere. fourier transform infrared spectroscopy (ftir), x-ray diffraction (xrd), and scanning electron microscopy (sem) were employed to analyze the microstructure, composition and surface morphology of the films. the influences of the high temperature annealing on the microstructure of a-sic:h film and the metal induced metallization were investigated.
英文摘要	a series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. a very thin (around 15 a) gold film was evaporated on the half area of the asic:h films to investigate the metal induced crystallization effect. then the a-sic:h films were annealed at 1100 degrees c for 1 hour in the nitrogen atmosphere. fourier transform infrared spectroscopy (ftir), x-ray diffraction (xrd), and scanning electron microscopy (sem) were employed to analyze the microstructure, composition and surface morphology of the films. the influences of the high temperature annealing on the microstructure of a-sic:h film and the metal induced metallization were investigated.; zhangdi于2010-03-29批量导入; made available in dspace on 2010-03-29t06:06:27z (gmt). no. of bitstreams: 1 2393.pdf: 1239373 bytes, checksum: bd3523b10a4197472e26927d401a7372 (md5) previous issue date: 2006; portuguese mat soc.; mat network atlantic arc.; ciceco.; bpi.; bayer mat sci.; durit.; izasa.; gic.; novagres.; rauschert.; criolab cryogenics vacuum syst vacuum chambers.; fct.; nti europe.; fdn calouste gulbenkian.; scientec.; thermolab.; papelave.; cienciapt net.; air liquide. univ aveiro; univ nova lisboa, fac ciencias & tecnol, dept ciencia mat, p-2829516 caparica, portugal; uninova, cemop, p-2829516 caparica, portugal; chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china; univ aveiro, dept ceram & glass engn, p-3810193 aveiro, portugal
收录类别	CPCI-S
会议主办者	portuguese mat soc.; mat network atlantic arc.; ciceco.; bpi.; bayer mat sci.; durit.; izasa.; gic.; novagres.; rauschert.; criolab cryogenics vacuum syst vacuum chambers.; fct.; nti europe.; fdn calouste gulbenkian.; scientec.; thermolab.; papelave.; cienciapt net.; air liquide. univ aveiro
会议录	advanced materials forum iii丛书标题: materials science forum
会议录出版者	trans tech publications ltd ; brandrain 6, ch-8707 zurich-uetikon, switzerland
会议录出版地	brandrain 6, ch-8707 zurich-uetikon, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0255-5476
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/10020]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang, S,Hu, Z,Raniero, L,et al. The study of high temperature annealing of a-SiC : H films[C]. 见:3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm). aveiro, portugal. mar 20-23, 2005.