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CORC

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Effect of beta-irradiation on photoluminescence of MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2009, 卷号: 20, 期号: 1, 页码: 14-16
Majid A; Israr M; Zhu JJ; Ali A
收藏  |  浏览/下载：266/76  |  提交时间：2010/03/08
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107
作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H
收藏  |  浏览/下载：66/1  |  提交时间：2010/03/08
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载：51/5  |  提交时间：2010/03/08
Optical analysis of dislocation-related physical processes in GaN-based epilayers 期刊论文
physica status solidi b-basic solid state physics, 2007, 卷号: 244, 期号: 8, 页码: 2878-2891
Jiang, DS (Jiang, De-Sheng); Zhao, DG (Zhao, De-Gang); Yang, H (Yang, Hui)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418
作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:  Zhang SM
收藏  |  浏览/下载：83/0  |  提交时间：2010/04/11
Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123101
Sun, Q (Sun, Q.); Wang, H (Wang, H.); Jiang, DS (Jiang, D. S.); Jin, RQ (Jin, R. Q.); Huang, Y (Huang, Y.); Zhang, SM (Zhang, S. M.); Yang, H (Yang, H.); Jahn, U (Jahn, U.); Ploog, KH (Ploog, K. H.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/03/29
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917
作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG
收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11
Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101
Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.)
收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11
The influence of AlN buffer layer thickness on the properties of GaN epilayer 期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 24-29
作者:  Zhao DG
收藏  |  浏览/下载：56/32  |  提交时间：2010/03/09

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