Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

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	Role of edge dislocations in enhancing the yellow luminescence of n-type GaN
	Jiang DS; Zhu JJ; Li XY; Zhang SM; Zhao DG
刊名	applied physics letters
	2006
卷号	88 期号:24 页码:art.no.241917
关键词	CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION MG-DOPED GAN UNDOPED GAN PHOTOLUMINESCENCE BANDS THREADING DISLOCATIONS POSITRON-ANNIHILATION GROWTH STOICHIOMETRY GALLIUM NITRIDE
ISSN号	0003-6951
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: dgzhao@red.semi.ac.cn
中文摘要	we investigate the origin of yellow luminescence in n-type gan. it is found that the relative intensity of yellow luminescence increases as the full width at half maximum of the x-ray diffraction rocking curve at the (102) plane increases. this indicates that the yellow luminescence is related to the edge dislocation density. in addition, the relative intensity of yellow luminescence is confirmed to increase with increasing si doping for the high quality gan we have obtained. we propose that the yellow luminescence is effectively enhanced by the transition from donor impurities such as si to acceptors around the edge dislocations in n-type gan. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10614]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS,Zhu JJ,Li XY,et al. Role of edge dislocations in enhancing the yellow luminescence of n-type GaN[J]. applied physics letters,2006,88(24):art.no.241917.
APA	Jiang DS,Zhu JJ,Li XY,Zhang SM,&Zhao DG.(2006).Role of edge dislocations in enhancing the yellow luminescence of n-type GaN.applied physics letters,88(24),art.no.241917.
MLA	Jiang DS,et al."Role of edge dislocations in enhancing the yellow luminescence of n-type GaN".applied physics letters 88.24(2006):art.no.241917.