Effect of annealing on photoluminescence properties of neon implanted GaN

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	Effect of annealing on photoluminescence properties of neon implanted GaN
	Yang H; Lu GJ; Zhang SM; Zhao DG; Yang H; Jiang DS; Zhu JJ; Wang YT; Liu W; Liu W
刊名	journal of physics d-applied physics
	2008
卷号	41 期号:2 页码:art. no. 025107
关键词	LUMINESCENCE
ISSN号	0022-3727
通讯作者	ali, a, quaid i azam univ, dept phys, adv mat phys lab, islamabad, pakistan. 电子邮箱地址: akbar@qau.edu.pk
中文摘要	the effect of thermal annealing on the luminescence properties of neon implanted gan thin films was studied. low temperature photoluminescence (pl) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees c. we observed a new peak appearing at 3.44 ev in the low temperative pl spectra of all the implanted samples after annealing at 900 degrees c. this peak has not been observed in the pl spectra of implanted samples annealed at 800 degrees c except for the samples implanted with the highest dose. the intensity of the yellow luminescence (yl) band noticed in the pl spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). the appearance of a new peak at 3.44 ev and dose dependent suppression of the yl band are attributed to the dissociation of vgaon complexes caused by high energy ion implantation.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6852]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Lu GJ,Zhang SM,et al. Effect of annealing on photoluminescence properties of neon implanted GaN[J]. journal of physics d-applied physics,2008,41(2):art. no. 025107.
APA	Yang H.,Lu GJ.,Zhang SM.,Zhao DG.,Yang H.,...&Liu W.(2008).Effect of annealing on photoluminescence properties of neon implanted GaN.journal of physics d-applied physics,41(2),art. no. 025107.
MLA	Yang H,et al."Effect of annealing on photoluminescence properties of neon implanted GaN".journal of physics d-applied physics 41.2(2008):art. no. 025107.