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High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
半导体设置及其制造方法及包括该设置的电子设备 专利
专利号: US10115641, 申请日期: 2018-10-30, 公开日期: 2018-04-05
作者:  朱慧珑
收藏  |  浏览/下载：21/0  |  提交时间：2019/03/27
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates 会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:  Lou, Haijun;  Li, Wentao;  Yang, Yumei;  Lin, Xinnan
收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15
Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 430, 页码: 59-63
作者:  Hu, P. P.;  Liu, J.;  Zhang, S. X.;  Maaz, K.;  Zeng, J.
收藏  |  浏览/下载：26/0  |  提交时间：2018/10/08
Friction of Poroelastic Contacts with Thin Hydrogel Films 期刊论文
Langmuir : the ACS journal of surfaces and colloids, 2018, 卷号: 34, 期号: 33, 页码: 9617-9626
作者:  Delavoipière, Jessica;  Tran, Yvette;  Verneuil, Emilie;  Heurtefeu, Bertrand;  Hui, Chung Yuen
收藏  |  浏览/下载：15/0  |  提交时间：2019/01/08
Cu-Thienoquinone Charge-Transfer Complex: Synthesis, Characterization, and Application in Organic Transistors 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 31, 页码: 26451-26455
作者:  Wang, Deliang;  Qiao, Xiaolan;  Tao, Jingwei;  Zou, Ye;  Wu, Hongzhuo
收藏  |  浏览/下载：152/0  |  提交时间：2019/04/09
Significant Enhancement of Single-Walled Carbon Nanotube Based Infrared Photodetector Using PbS Quantum Dots 期刊论文
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 卷号: 24, 期号: 4
作者:  Tang, Yicheng;  Fang, Hehai;  Long, Mingsheng;  Chen, Gang;  Zheng, Zhe
收藏  |  浏览/下载：43/0  |  提交时间：2019/04/09
Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 1873-1879
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
Self-aligned photolithography for the fabrication of fully transparent high-voltage devices 期刊论文
Journal of physics d: applied physics, 2018, 卷号: 51, 期号: 17
作者:  Zhang,Yonghui;  Mei,Zengxia;  Huo,Wenxing;  Wang,Tao;  Liang,Huili
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/09

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