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	Self-aligned photolithography for the fabrication of fully transparent high-voltage devices
	Zhang,Yonghui1,2; Mei,Zengxia1; Huo,Wenxing1,2; Wang,Tao1; Liang,Huili1; Du,Xiaolong1,2
刊名	Journal of physics d: applied physics
	2018-04-04
卷号	51期号:17
关键词	High-voltage Self-aligned Thin film transistors Diodes Inverters Transparent
ISSN号	0022-3727
DOI	10.1088/1361-6463/aab638
英文摘要	Abstract high-voltage devices, working in the range of hundreds of volts, are indispensable elements in the driving or readout circuits for various kinds of displays, integrated microelectromechanical systems and x-ray imaging sensors. however, the device performances are found hardly uniform or repeatable due to the misalignment issue, which are extremely common for offset drain high-voltage devices. to resolve this issue, this article reports a set of self-aligned photolithography technology for the fabrication of high-voltage devices. high-performance fully-transparent high-voltage thin film transistors, diodes and logic inverters are successfully fabricated with this technology. unlike other self-aligned routes, opaque masks are introduced on the backside of the transparent substrate to facilitate proximity exposure method. the photolithography process is simulated and analyzed with technology computer aided design simulation to explain the working principle of the proximity exposure method. the substrate thickness is found to be vital for the implementation of this technology based on both simulation and experimental results. the electrical performance of high-voltage devices is dependent on the offset length, which can be delicately modulated by changing the exposure dose. the presented self-aligned photolithography technology is proved to be feasible in high-voltage circuits, demonstrating its huge potential in practical industrial applications.
语种	英语
出版者	IOP Publishing
WOS记录号	IOP:0022-3727-51-17-AAB638
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2373998
专题	物理研究所
作者单位	1.Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China 2.School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
推荐引用方式 GB/T 7714	Zhang,Yonghui,Mei,Zengxia,Huo,Wenxing,et al. Self-aligned photolithography for the fabrication of fully transparent high-voltage devices[J]. Journal of physics d: applied physics,2018,51(17).
APA	Zhang,Yonghui,Mei,Zengxia,Huo,Wenxing,Wang,Tao,Liang,Huili,&Du,Xiaolong.(2018).Self-aligned photolithography for the fabrication of fully transparent high-voltage devices.Journal of physics d: applied physics,51(17).
MLA	Zhang,Yonghui,et al."Self-aligned photolithography for the fabrication of fully transparent high-voltage devices".Journal of physics d: applied physics 51.17(2018).

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