QQ客服 官方微博 反馈留言

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 发表日期：2010    学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dependence of transport properties in tunnel junction on boron doping 会议论文 23rd international conference on amorphous and nanocrystalline semiconductors (icans23), utrecht, netherlands, aug 23-28, 2009 Shi MJ; Zeng XB; Liu SY; Peng WB; Xiao HB; Liao XB; Wang ZG; Kong GL 收藏  |  浏览/下载：43/2  |  提交时间：2011/07/15 High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：150/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Photoexcited charge current for the presence of pure spin current 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 26, 页码: art. no. 262108 Liu Y (Liu Yu); Chen YH (Chen Yonghai); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：221/46  |  提交时间：2010/09/07 ELECTRONIC MEASUREMENT  SEMICONDUCTORS  TRANSPORT   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：221/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文 ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103 Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.) 收藏  |  浏览/下载：62/0  |  提交时间：2010/11/14 Electron state density  Fermi-level pinning (FLP)  MIS structures  work function (WF)  WORK FUNCTION   Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文 journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102 Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12 DEPENDENCE  SPECTRA   Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：87/11  |  提交时间：2010/08/17 DEPENDENCE  WELL   Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 19, 页码: art. no. 193511 Lin L (Lin L.); Zhen HL (Zhen H. L.); Li N (Li N.); Lu W (Lu W.); Weng QC (Weng Q. C.); Xiong DY (Xiong D. Y.); Liu FQ (Liu F. Q.) 收藏  |  浏览/下载：15/0  |  提交时间：2010/12/12 DETECTORS   Monolithic integration of electroabsorption modulators and tunnel injection distributed feedback lasers using quantum well intermixing 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 12, 页码: article no.124215 Wang Y; Pan JQ; Zhao LJ; Zhu HL; Wang W 收藏  |  浏览/下载：46/1  |  提交时间：2011/07/05 electroabsorption modulator  tunnel injection  wide temperature range operation  quantum well intermixing  LIGHT-SOURCE MODULE  LOW-DRIVE-VOLTAGE  DFB LASER  TEMPERATURE-DEPENDENCE  CHIRP  TRANSMISSION  OPERATION  LAYER  DIODE  GB/S   Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏  |  浏览/下载：148/33  |  提交时间：2010/06/04 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials