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Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载:105/4  |  提交时间:2010/09/07
Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation 期刊论文
ieee photonics journal, 2010, 卷号: 2, 期号: 6, 页码: 974-980
Zhao JH (Zhao Ji-Hong); Cheng BW (Cheng Bu-Wen); Chen QD (Chen Qi-Dai); Su W (Su Wen); Jiang Y (Jiang Ying); Chen ZG (Chen Zhan-Guo); Jia G (Jia Gang); Sun HB (Sun Hong-Bo)
收藏  |  浏览/下载:85/0  |  提交时间:2010/12/12
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:110/2  |  提交时间:2010/04/22
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载:128/4  |  提交时间:2010/04/13
Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 10, 页码: art. no. 106802
Guo X (Guo Xi); Wang H (Wang Hui); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:28/0  |  提交时间:2010/11/02
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载:113/3  |  提交时间:2010/04/05
Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 3, 页码: 411-414
作者:  Xue CL
收藏  |  浏览/下载:28/0  |  提交时间:2010/04/05
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载:36/0  |  提交时间:2010/12/12
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:75/2  |  提交时间:2010/05/24
Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111) 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038103
Wang H (Wang Hui); Liang H (Liang Hu); Wang Y (Wang Yong); Ng KW (Ng Kar-Wei); Deng DM (Deng Dong-Mei); Lau KM (Lau Kei-May)
收藏  |  浏览/下载:96/3  |  提交时间:2010/04/22


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