Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method

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	Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method
	Xue CL
刊名	journal of luminescence
	2010
卷号	130 期号:3 页码:411-414
关键词	Erbium silicate Photoluminescence Si photonics WAVE-GUIDE AMPLIFIERS CRYSTALLINE FILMS ERBIUM SILICATE ENERGY-TRANSFER SI ER3+ EXCITATION
通讯作者	zheng, j, chinese acad sci, inst semicond, stare key lab integrated optoelect, beijing 100083, peoples r china. e-mail address: zhengjun@semi.ac.cn
合作状况	其它
英文摘要	e2sio5 thin films were fabricated on si substrate by reactive magnetron sputtering method with subsequent annealing treatment. the morphology properties of as-deposited films have been studied by scanning electron microscope. the fraction of erbium is estimated to be 23.5 at% based on rutherford backscattering measurement in as-deposited er-si-o film. x-ray diffraction measurement revealed that er2sio5 crystalline structure was formed as sample treated at 1100 degrees c for 1 h in o-2 atmosphere. through proper thermal treatment, the 1.53 mu m er3+-related emission intensity can be enhanced by a factor of 50 with respect to the sample annealed at 800 degrees c. analysis of pump-power dependence of er3+ pl intensity indicated that the upconversion phenomenon could be neglected even under a high photon flux of 10(21) (photons/cm(2)/sec). temperature-dependent photoluminescence (pl) of er2sio5 was studied and showed a weak thermal quenching factor of 2. highly efficienct photoluminescence of er2sio5 films has been demonstrated with er3+ concentration of 10(22)/cm(3), and it opens a promising way towards future si-based light source for si photonics. (c) 2009 elsevier b.v. all rights reserved.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05t08:02:49z no. of bitstreams: 1 50.pdf: 381942 bytes, checksum: 92279457edc32680ab57f27533374a8d (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-05t08:07:01z (gmt) no. of bitstreams: 1 50.pdf: 381942 bytes, checksum: 92279457edc32680ab57f27533374a8d (md5); made available in dspace on 2010-04-05t08:07:01z (gmt). no. of bitstreams: 1 50.pdf: 381942 bytes, checksum: 92279457edc32680ab57f27533374a8d (md5) previous issue date: 2010; national basic research program of china (973 program) 2007-cb613404；state key lab on integrated optoelectronics, is division 20080301; 其它
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china (973 program) 2007-cb613404；state key lab on integrated optoelectronics, is division 20080301
语种	英语
公开日期	2010-04-05 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10216]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Xue CL. Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method[J]. journal of luminescence,2010,130(3):411-414.
APA	Xue CL.(2010).Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method.journal of luminescence,130(3),411-414.
MLA	Xue CL."Highly efficient photoluminescence of Er2SiO5 films grown by reactive magnetron sputtering method".journal of luminescence 130.3(2010):411-414.