QQ客服 官方微博 反馈留言

	Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode
	Li, GL; Kilchytska, V; Andre, N; Francis, LA; Zeng, Y; Flandre, D
刊名	IEEE Transactions on Electron Devices
	2017
卷号	Vol.64 No.10页码:4252-4259
关键词	P-i-n diodes Leakage currents Annealing Performance evaluation Silicon Optical sensors Silicon-on-insulator Annealing characterization dark leakage current interface traps low-frequency noise (LFN) P⁺P⁻N⁺ (p-i-n) diode silicon on insulator (SOI) simulation
ISSN号	0018-9383;1557-9646
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/6046573
专题	湖南大学
作者单位	1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Catholic Univ Louvain, Inst Informat & Commun Technol Elect & Appl Math, B-1348 Louvain La Neuve, Belgium 3.Catholic Univ Louvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium
推荐引用方式 GB/T 7714	Li, GL,Kilchytska, V,Andre, N,et al. Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode[J]. IEEE Transactions on Electron Devices,2017,Vol.64 No.10:4252-4259.
APA	Li, GL,Kilchytska, V,Andre, N,Francis, LA,Zeng, Y,&Flandre, D.(2017).Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode.IEEE Transactions on Electron Devices,Vol.64 No.10,4252-4259.
MLA	Li, GL,et al."Leakage Current and Low-Frequency Noise Analysis and Reduction in a Suspended SOI Lateral p-i-n Diode".IEEE Transactions on Electron Devices Vol.64 No.10(2017):4252-4259.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。