Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain

	Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain
	Liu XY(刘新宇); Yang CY(杨成樾); Shen HJ(申华军); Li CZ(李诚瞻); Bai Y(白云); Tang YD(汤益丹)
刊名	Materials Science Forum
	2017-05-15
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.106/handle/172511/18020]
专题	微电子研究所_高频高压器件与集成研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Liu XY,Yang CY,Shen HJ,et al. Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain[J]. Materials Science Forum,2017.
APA	Liu XY,Yang CY,Shen HJ,Li CZ,Bai Y,&Tang YD.(2017).Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain.Materials Science Forum.
MLA	Liu XY,et al."Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain".Materials Science Forum (2017).