QQ客服 官方微博 反馈留言

	Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer
	Ning, Honglong[1]; Zeng, Yong[1]; Zheng, Zeke[1]; Zhang, Hongke[1]; Fang, Zhiqiang[1]; Yao, Rihui[1]; Hu, Shiben[1]; Li, Xiaoqing[1]; Peng, Junbiao[1]; Xie, Weiguang[2]
	2018
卷号	65期号:2页码:537
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4431105
专题	暨南大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China 2.[2] Siyuan Laboratory, Department of Physics and Department of Electronic Engineering, Jinan University, Guangzhou, 510632, China 3.[3] Guangdong Prov. Key Lab. of Quant. Eng. and Quant. Mat. and the Institute for Advanced Materials, South China Normal University, Guangzhou, 510006, China
推荐引用方式 GB/T 7714	Ning, Honglong[1],Zeng, Yong[1],Zheng, Zeke[1],et al. Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer[J],2018,65(2):537.
APA	Ning, Honglong[1].,Zeng, Yong[1].,Zheng, Zeke[1].,Zhang, Hongke[1].,Fang, Zhiqiang[1].,...&Lu, Xubing[3].(2018).Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer.,65(2),537.
MLA	Ning, Honglong[1],et al."Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3Passivation Layer".65.2(2018):537.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。