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CORC

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Wetting of aqueous sodium dodecyl sulfate droplets on polydimethylsiloxane surfaces during evaporation 期刊论文
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2023, 卷号: 656, 页码: 9
作者:  Yang, XiaoYe;  Li, GuoHao;  Huang XF(黄先富);  Yu, YingSong
收藏  |  浏览/下载：16/0  |  提交时间：2022/12/20
Decarbonizing China's power sector by 2030 with consideration of technological progress and cross-regional power transmission 期刊论文
ENERGY POLICY, 2021, 卷号: 150, 页码: 14
作者:  Xiao, Jin;  Li, Guohao;  Xie, Ling;  Wang, Shouyang;  Yu, Lean
收藏  |  浏览/下载：39/0  |  提交时间：2021/06/01
DNN-Assisted activity classification using fiber interferometer sensor 会议论文
Nantong, China, 2021-10-10
作者:  Zhu, Guohao;  Xu, Wei;  Yu, Cheung Chuen;  Sun, Wenye;  Dong, Bo
收藏  |  浏览/下载：46/0  |  提交时间：2022/01/27
MZI  Activity Monitoring  DNN  CNN  LSTM  FNN  
New Natural and Fused Quartz Reference Materials for Oxygen Isotope Microanalysis 期刊论文
ATOMIC SPECTROSCOPY, 2020, 卷号: 41, 期号: 5, 页码: 188-193
作者:  Tang, GuoQiang;  Liu, Yu;  Li, QiuLi;  Feng, LianJun;  Wei, GangJian
收藏  |  浏览/下载：23/0  |  提交时间：2021/11/10
Spin-orbit torques in GaN/NiFe bilayers 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52, 期号: 1
作者:  Luo, Xin;  Wang, Bochong;  Lv, Weiming;  Yu, Guohao;  Lu, Zhihong
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/05
10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文
AIP ADVANCES, 2018
作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
收藏  |  浏览/下载：65/0  |  提交时间：2019/03/27
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
收藏  |  浏览/下载：44/0  |  提交时间：2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
收藏  |  浏览/下载：48/0  |  提交时间：2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Ding, Xiaoyu;  Yu, Guohao;  Cheng, Kai;  Cai, Yong;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：30/0  |  提交时间：2019/03/27

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