Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

	Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
	Deng, Xuguang(邓旭光); Li, Xiang; Xu, Ning; Hao, Ronghui(郝荣晖); Zhang, Xinping; Cai, Yong(蔡勇); Fu, Kai(付凯); Cheng, Kai; Song, Liang(宋亮); Zhang, Baoshun(张宝顺)
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2018
其他题名	Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/6195]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
作者单位	中国科学院苏州纳米技术与纳米仿生研究所
推荐引用方式 GB/T 7714	Deng, Xuguang,Li, Xiang,Xu, Ning,et al. Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2018.
APA	Deng, Xuguang.,Li, Xiang.,Xu, Ning.,Hao, Ronghui.,Zhang, Xinping.,...&Zhao, Jie.(2018).Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT.IEEE TRANSACTIONS ON ELECTRON DEVICES.
MLA	Deng, Xuguang,et al."Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT".IEEE TRANSACTIONS ON ELECTRON DEVICES (2018).