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浏览/检索结果: 共13条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文 applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 141101 Wang, HL; Yu, HY; Zhou, XL; Kan, Q; Yuan, LJ; Chen, WX; Wang, W; Ding, Y; Pan, JQ 收藏  |  浏览/下载：17/0  |  提交时间：2015/03/20 Ultrabroad stimulated emission from quantum well laser 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 25, 页码: 251101 Wang, HL; Zhou, XL; Yu, HY; Mi, JP; Wang, JQ; Bian, J; Ding, Y; Chen, WX; Wang, W; Pan, JQ 收藏  |  浏览/下载：21/0  |  提交时间：2015/04/02 Raman study on dislocation in high Al content AlxGa1-xN 期刊论文 european physical journal-applied physics, 2012, 卷号: 58, 期号: 1, 页码: 10102 Pan, X; Wang, XL; Xiao, HL; Wang, CM; Feng, C; Jiang, LJ; Yin, H; Chen, H 收藏  |  浏览/下载：11/0  |  提交时间：2013/01/29 Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102 作者:  Pan X;  Hou QF 收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05 ELECTRON-MOBILITY TRANSISTORS  AL-CONTENT  STRESS-CONTROL  PHASE EPITAXY  ALGAN  BUFFER  LAYERS  HETEROSTRUCTURES  INTERLAYERS  SILICON   Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文 journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032 作者:  Pan X 收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14 CHEMICAL-VAPOR-DEPOSITION  PHASE EPITAXY  ALN INTERLAYERS  FILMS  STRESS  LAYERS  DISLOCATIONS  REDUCTION  DENSITY  DIODES   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 会议论文 16th international conference on crystal growth (iccg16)/14th international conference on vapor growth and epitaxy (icvge14), beijing, peoples r china, aug 08-13, 2010 Pan X (Pan Xu); Wei M (Wei Meng); Yang CB (Yang Cuibai); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang) 收藏  |  浏览/下载：15/0  |  提交时间：2011/07/26 Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文 3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010 Wei M (Wei Meng); Wang XL (Wang Xiaoliang); Pan X (Pan Xu); Xiao HL (Xiao Hongling); Wang CM (Wang Cuimei); Zhang ML (Zhang Minglan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：12/0  |  提交时间：2011/07/26 Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文 materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100 Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG 收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06 GaN  MOCVD  Si(111)  AlN  VAPOR-PHASE EPITAXY  LAYERS  SUBSTRATE  MOCVD  STRESS   Surface characterization of AlGaN grown on Si (111) substrates 期刊论文 journal of crystal growth, 2011, 卷号: 331, 期号: 1, 页码: 29-32 Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H 收藏  |  浏览/下载：17/0  |  提交时间：2012/01/06 MOLECULAR-BEAM EPITAXY  FIELD-EFFECT TRANSISTORS  VAPOR-PHASE EPITAXY  GROUP-III NITRIDES  INVERSION DOMAINS  HIGH-TEMPERATURE  GAN  SI(111)  ALN  SAPPHIRE   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者:  Pan X 收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05 Sandwich structure  Stress  Aluminum nitride  Gallium nitride  Silicon  PHONON DEFORMATION POTENTIALS  WURTZITE ALN  SILICON  STRESS  TRANSISTORS  EPITAXY  LAYERS