Surface characterization of AlGaN grown on Si (111) substrates

	Surface characterization of AlGaN grown on Si (111) substrates
	Pan X ; Wang XL ; Xiao HL ; Wang CM ; Feng C ; Jiang LJ ; Yin HB ; Chen H
刊名	journal of crystal growth
	2011
卷号	331 期号:1 页码:29-32
关键词	MOLECULAR-BEAM EPITAXY FIELD-EFFECT TRANSISTORS VAPOR-PHASE EPITAXY GROUP-III NITRIDES INVERSION DOMAINS HIGH-TEMPERATURE GAN SI(111) ALN SAPPHIRE
ISSN号	0022-0248
通讯作者	pan, x (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china, xpan@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02]
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22661]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Pan X,Wang XL,Xiao HL,et al. Surface characterization of AlGaN grown on Si (111) substrates[J]. journal of crystal growth,2011,331(1):29-32.
APA	Pan X.,Wang XL.,Xiao HL.,Wang CM.,Feng C.,...&Chen H.(2011).Surface characterization of AlGaN grown on Si (111) substrates.journal of crystal growth,331(1),29-32.
MLA	Pan X,et al."Surface characterization of AlGaN grown on Si (111) substrates".journal of crystal growth 331.1(2011):29-32.